参数资料
型号: SD1500C30LPBF
元件分类: 整流器
英文描述: 1600 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AB
封装: CERAMIC, BPUK-2
文件页数: 2/6页
文件大小: 80K
代理商: SD1500C30LPBF
SD1500C..L Series
2
Bulletin I2086 rev. B 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
VV
mA
04
400
500
08
800
900
12
1200
1300
SD1500C..L
16
1600
1700
50
20
2000
2100
25
2500
2600
30
3000
3100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
1600(820)
A
180° conduction, half sine wave
@ Heatsink temperature
55(85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
3010
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
16600
t = 10ms
No voltage
non-repetitive surge current
17400
t = 8.3ms
reapplied
14000
t = 10ms
100% V
RRM
14700
t = 8.3ms
reapplied
Sinusoidal halfwave,
I2t
Maximum I2t for fusing
1386
t = 10ms
No voltage
Initial T
J
= T
J
max.
1265
t = 8.3ms
reapplied
980
t = 10ms
100% V
RRM
895
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
13860
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.64
V
I
pk
= 3000A, T
J = TJ max, t
p
= 10ms sinusoidal wave
A
KA2s
0.83
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
Parameter
SD1500C..L
Units
Conditions
Forward Conduction
V
m
0.27
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
0.95
(I >
π x I
F(AV)), TJ = TJ max.
0.25
(I >
π x I
F(AV)
),T
J
= T
J
max.
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