参数资料
型号: SD1553C22S30K
元件分类: 整流器
英文描述: 1650 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AC
封装: KPUK-2
文件页数: 4/10页
文件大小: 227K
代理商: SD1553C22S30K
SD1553C..K Series
3
Bulletin I2091 rev. B 04/00
www.irf.com
Ordering Information Table
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
-t
rr
code
7
-
K = Puk Case DO-200AC (K-PUK)
SD 155
3
C
30 S30
K
1
23
4
5
6
7
Device Code
Conduction angle
Units
Conditions
Single Side Double Side
Sinusoidal conduction
Rectangular conduction
180°
0.0018
0.0019
0.0012
T
J = TJ max.
120°
0.0021
90°
0.0027
0.0029
K/W
60°
0.0039
0.0041
30°
0.0067
0.0068
R
thJ-hs Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 150 °C
Recovery Characteristics
typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
S20
2.0
1000
100
- 50
4.5
650
240
S30
3.0
1000
100
- 50
5.0
780
260
T
J = 25
oC
SD1553C..K
S20
S30
T
J
Max. junction operating temperature range
-40 to 150
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance, case junction
0.04
DC operation single side cooled
to heatsink
0.02
DC operation double side cooled
F
Mounting force, ± 10%
22250
N
(2250)
(Kg)
wt
Approximate weight
425
g
Case style
DO-200AC (K-PUK)
See Outline Table
°C
Parameter
Units
Conditions
Thermal and Mechanical Specifications
K/W
相关PDF资料
PDF描述
SD1700C24KPBF 2080 A, 2400 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1700C30KPBF 2080 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1700C36KPBF 2080 A, 3600 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1700C45KPBF 1875 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1700C30K 2080 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AC
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