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参数资料
| 型号： | SD200SC150C |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封装： | DIE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 53K |
| 代理商： | SD200SC150C |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SD200SC150A/B/C
Technical Data
Data Sheet 4026, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
200
°C Operating Temperature
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Out Performs 150 Volt Ultrafast Rectifiers
Maximum Ratings
(1):
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
150
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
60
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, Sine pulse
(1)
860
A
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics
(1):
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25 °C
0.87
V
VF2
@ 60A, Pulse, TJ = 125 °C
0.72
V
Max. Reverse Current
IR1
@VR = 150V, Pulse,
TJ = 25 °C
1.5
mA
IR2
@VR = 150V, Pulse,
TJ = 125 °C
24
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
1500
pF
(1) in SHD package
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