参数资料
型号: SD263C45S50L
元件分类: 整流器
英文描述: 375 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AB
封装: BPUK-2
文件页数: 7/7页
文件大小: 152K
代理商: SD263C45S50L
SD263C..S50L Series
7
Bulletin I2071 rev. B 04/00
www.irf.com
nt Characteristics
Fig. 18 - Frequency Characteristics
Fig. 20 - Frequency Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 16 - Frequency Characteristics
1E2
1E3
1E4
1E 1
1E2
1E3
1 E4
1
2
Pulse Basew idth ( s )
P
e
a
kF
o
rw
a
rd
C
u
rre
n
t
(A
)
10 jo ule s pe r pu ls e
6
4
0.5
0.3
d v /d t = 1000V/ s
T = 125 °C , V
= 1500V
J
RRM
Si nu so ida l Pu lse
SD 263C..S50L Se rie s
tp
1E2
1E3
1E4
1E1
1E 2
1 E3
1 E4
1
2
Pulse Basew idth (s)
4
1 0 jo ule s pe r pu ls e
6
0. 5
0.3
T rap ezo id al P uls e
P
e
a
kF
o
rw
a
rd
C
u
rre
n
t(
A
)
T = 125 °C , V
= 1500V
RRM
SD 263C ..S50L Se r ie s
d v / dt = 1000V / s
d i/ d t = 300A / s
J
tp
1E2
1E3
1E4
1E1
1E 2
1 E3
1 E4
1
2
Pulse Basew idth (s)
4
1 0 jo u le s pe r pu ls e
6
0. 5
0.3
T rape z oi dal Pu lse
P
e
ak
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
T = 125 °C , V
= 1500V
RRM
SD 263C ..S50L S eri es
dv / d t = 1000V/ s
di /d t = 100A / s
J
tp
1E 2
1E 3
1E 4
1 E11 E 2
1E 31 E4
Pulse Basew idth (s)
SD 263C.. S50L Se rie s
Trap ezoi da l Pulse
50 H z
10 0
20 0
400
1000
1500
2000
4000
3000
60 0
T = 5 5 °C , V
= 1500V
RRM
6000
P
e
ak
F
o
rw
ar
d
C
u
rr
e
n
t
(A
)
dv / dt = 1000V/ u s,
di /d t = 100A / u s
C
tp
1E 2
1E 3
1E 4
1 E11 E 2
1E 31 E4
Pulse Basewidth ( s)
SD 263C ..S50L Se rie s
Tr ape zo i dal Pu ls e
50 H z
100
20 0
400
1000
1500
2000
4000
3000
600
P
e
ak
F
o
rw
ar
d
C
u
rr
e
n
t
(A
)
dv / dt = 10 0 0V / us ,
d i/ d t = 300A / us
T = 5 5 °C, V
= 15 00 V
C
RRM
tp
1E2
1E3
1E4
1E 1
1 E2
1 E3
1E 4
Pulse Basew idth (s)
50 H z
200
10000
100
4000
d v / dt = 1000V/ u s
400
1000
2000
6000
P
e
ak
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
Si nu so id al Pu l se
3000
1500
SD 263C ..S50L Se rie s
T = 5 5 ° C , V
= 1500V
C
RR M
tp
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