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参数资料
| 型号： | SD263C45S50LPBF |
| 元件分类： | 整流器 |
| 英文描述： | 375 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封装： | BPUK-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 152K |
| 代理商： | SD263C45S50LPBF |
SD263C..S50L Series
2
Bulletin I2071 rev. B 04/00
www.irf.com
Test conditions
Max. values @ T
J
= 125 °C
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Recovery Characteristics
S50
5.0
1000
100
- 50
4.5
680
240
(*) di/dt = 25A/us @ T
J = 25°C
typical t
rr
I
pk
di/dt (*)
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J = 25
oC
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
VV
mA
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
SD263C..S50L
50
I
F(AV)
Max. average forward current
375 (150)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
725
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
5500
t = 10ms
No voltage
non-repetitive surge current
5760
t = 8.3ms
reapplied
4630
t = 10ms
50% V
RRM
4850
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
151
t = 10ms
No voltage
Initial T
J = TJ max.
138
t = 8.3ms
reapplied
107
t = 10ms
50% V
RRM
98
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
1510
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(T O)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
3.20
V
I
pk
= 1000A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
Parameter
SD263C..S50L
Units
Conditions
Forward Conduction
KA2s
A
V
m
1.53
(I >
π x I
F(AV)),TJ = TJ max.
1.64
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
1.71
(I >
π x I
F(AV)),TJ = TJ max.
1.56
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
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