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参数资料
| 型号： | SD400C24C |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 800 A, 2400 V, SILICON, RECTIFIER DIODE, DO-200AA |
| 封装： | ROHS COMPLIANT, CERAMIC, PUK-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 137K |
| 代理商： | SD400C24C |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93547
2
Revision: 05-Mar-08
SD400C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version), 800 A
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
800 (425)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
1435
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8250
t = 8.3 ms
8640
t = 10 ms
50 % VRRM
reapplied
6940
t = 8.3 ms
7265
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
340
kA2s
t = 8.3 ms
311
t = 10 ms
50 % VRRM
reapplied
241
t = 8.3 ms
220
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
3400
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.80
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
0.83
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.55
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.53
Maximum forward voltage drop
VFM
Ipk = 1930 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave
1.86
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 190
°C
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.163
K/W
DC operation double side cooled
0.073
Mounting force, ± 10 %
4900 (500)
N (kg)
Approximate weight
70
g
Case style
See dimensions - link on page 5
DO-200AA
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.017
0.018
0.011
0.012
TJ = TJ maximum
K/W
120°
0.020
90°
0.025
0.027
60°
0.037
0.036
0.038
30°
0.064
0.062
0.065
0.062
相关PDF资料 |
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| SD400C12C | 800 A, 1200 V, SILICON, RECTIFIER DIODE, DO-200AA |
| SD400C04C | 800 A, 400 V, SILICON, RECTIFIER DIODE, DO-200AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD400N | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES Stud Version |
| SD400N(R) | 制造商:LIUJING 制造商全称:LIUJING 功能描述:可控硅、晶闸管 |
| SD400N/R16 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 400 A |
| SD400N/R20 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 400 A |
| SD400N/R24 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 400 A |
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