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参数资料
| 型号： | SD403C16S15C |
| 元件分类： | 整流器 |
| 英文描述： | 430 A, 1600 V, SILICON, RECTIFIER DIODE, DO-200AA |
| 封装： | PUK-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 163K |
| 代理商： | SD403C16S15C |
SD403C..C Series
2
Bulletin I2067 rev. C 04/00
www.irf.com
Voltage
V
RRM
max. repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
T
J
= 125°C
VV
mA
04
400
500
SD403C..S10C
08
800
900
10
1000
1100
12
1200
1300
SD403C..S15C
14
1400
1500
16
1600
1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
SD403C..C
Units
Conditions
Forward Conduction
KA
2s
A
I
F(AV)
Max. average forward current
430(210)
A
180° conduction, half sine wave.
@ Heatsink temperature
55(75)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS current
675
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle
6180
t = 10ms
No voltage
non-repetitive forward current
6470
t = 8.3ms
reapplied
5200
t = 10ms
100% V
RRM
5445
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2 t
Maximum I
2 t for fusing
191
t = 10ms
No voltage
Initial T
J = TJ max.
175
t = 8.3ms
reapplied
135
t = 10ms
100% V
RRM
123
t = 8.3ms
reapplied
I
2 √t
Maximum I2
√t for fusing
1910
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
1.00
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
V
F(TO)
2
High level of threshold voltage
1.20
(I >
π x I
F(AV)
), T
J
= T
J
max.
r
f1
Low level of forward slope resistance
0.56
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
r
f2
High level of forward slope resistance
0.70
(I >
π x I
F(AV)
), T
J
= T
J
max.
V
FM
Max. forward voltage
1.83
V
I
pk
= 1350A, T
J = 25°C, t
p
= 10ms sinusoidal wave
m
V
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 125 °C
Recovery Characteristics
typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J = 25
oC
750
25
- 30
S10
1.0
2.4
52
33
S15
1.5
2.9
90
44
35
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