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参数资料
| 型号： | SD453R16S30PC |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 450 A, 1600 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, CERAMIC, B-8, 1 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 395K |
| 代理商： | SD453R16S30PC |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93176
2
Revision: 08-Apr-08
SD453N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 400/450 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD453N/R
UNITS
S20
S30
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
400
450
A
70
°C
Maximum RMS forward current at
case temperature
IF(RMS)
630
710
A
55
52
°C
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300
9600
A
t = 8.3 ms
9730
10 050
t = 10 ms
100 % VRRM
reapplied
7820
8070
t = 8.3 ms
8190
8450
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
432
460
kA2s
t = 8.3 ms
395
420
t = 10 ms
100 % VRRM
reapplied
306
326
t = 8.3 ms
279
297
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
4320
4600
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
1.00
0.95
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.09
1.04
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.80
0.60
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.74
0.54
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.20
1.85
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S20
2.0
1000
50
- 50
3.5
250
120
S30
3.0
5.0
380
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.1
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Mounting torque ± 10 %
Not-lubricated threads
50
Nm
Approximate weight
454
g
Case style
See dimensions (link at the end of datasheet)
B-8
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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PDF描述 |
|---|---|
| SD453N12S30MTC | 450 A, 1200 V, SILICON, RECTIFIER DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD453R16S30PSC | 制造商:n/a 功能描述:Diode REV |
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| SD453R20S20MSC | 制造商:IRF 制造商全称:International Rectifier 功能描述:FAST RECOVERY DIODES |
| SD453R20S20MTC | 制造商:IRF 制造商全称:International Rectifier 功能描述:FAST RECOVERY DIODES |
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