| 型号： | SD500N30PSC |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | DIODE STD REC 3000V 475A B-8 |
| 标准包装： | 6 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 3000V（3kV） |
| 电流 - 平均整流 (Io)： | 475A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.66V @ 1000A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 50mA @ 3000V |
| 安装类型： | 底座，接线柱安装 |
| 封装/外壳： | B-8 |
| 供应商设备封装： | B-8 |
| 包装： | 散装 |
| 其它名称： | *SD500N30PSC |
| SD500NlR Series Bulletin |2095 rev. B 09/06 lnlernolionciiISBR Rectifier ELECTRICAL SPECIFICATIONSVoltage Ratings Voltage VRRM . maximum repetitive Type number Code peak reverse voltageV VRSM, maximum non- repetitive peak rev. voltageV SDSOON/R FonNard Conduction Parameter SD500N/R Conditions I Max. average fonivard currentF(AV)@ Case temperature|F(AV) Max. average fonivard current@ Case temperature 180° conduction, half sine wave 180° conduction, half sine wave DC @ 40°C case temperature IHRMS) Max. RMS forward current IFSM Max. peak, one-cycle forward, non-repetitive surge current No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Maximum lzt for fusing No voltage Initial TJ = TJ max. reapplied l2\“‘t Maximum l2\“t for fusing 50% VRRM reapplied t: 0.1 to toms, no voltage reapplied VF(TO)1 Low level value of threshold voltage (16.7%xnxIF(AV)<1<rrxI .TJ=TJmax.F(AV)) VF(TO)2 High level value of threshold voltage (I>nxI ,TJ=TJ max.F(AV)) Low level value of forward slope resistance (16.7% x Ir x IHAV) < I < rr x IF(AV)). TJ = TJ max. rfi rf2 High level value of fonivard slope resistance (l > rr x |F(AV)),TJ = TJ max. VFM Max. forward voltage drop 1.66 I =1000A,T =T max.t = 10ms sinusoidal wavepk J J p www.irf.com |
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