参数资料
型号: SD703C25S30L
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 790 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AB
封装: ROHS COMPLIANT, CERAMIC, BPUK-2
文件页数: 5/12页
文件大小: 534K
代理商: SD703C25S30L
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93179
2
Revision: 14-May-08
SD703C..L Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version),
700/790 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD703C..L
UNITS
S20
S30
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
700 (365)
790 (400)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
1320
1470
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300
9600
t = 8.3 ms
9730
10 050
t = 10 ms
100 % VRRM
reapplied
7820
8070
t = 8.3 ms
8190
8450
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
432
460
kA2s
t = 8.3 ms
395
420
t = 10 ms
100 % VRRM
reapplied
306
326
t = 8.3 ms
279
297
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
4320
4600
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.00
0.95
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.11
1.05
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.80
0.60
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
T(AV)), TJ = TJ maximum
0.76
0.56
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.20
1.85
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S20
2.0
1000
50
- 50
3.5
240
110
S30
3.0
5.0
380
130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
case junction to heatsink
RthJ-hs
DC operation single side cooled
0.092
K/W
DC operation double side cooled
0.046
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight
250
g
Case style
See dimensions - link at the end of datasheet
DO-200AB (B-PUK)
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
相关PDF资料
PDF描述
SD823C20S30C 910 A, 2000 V, SILICON, RECTIFIER DIODE
SDP8425-002 PHOTO TRANSISTOR DETECTOR
SDP8426-001 PHOTO TRANSISTOR DETECTOR
SDR12GSMSTX 12 A, 400 V, SILICON, RECTIFIER DIODE
SDR12JTXV 12 A, 600 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
SD-704 制造商:GC Electronics 功能描述:Cable Assembly RG6 15.24m Coaxial to Coaxial M-M
SD-70400-010 制造商:MOLEX 制造商全称:Molex Electronics Ltd. 功能描述:2.54mm (.100") Pitch SL?
SD7040-101-R 制造商:Cooper Bussmann 功能描述:IND 100UH,SMT,BLK - Bulk 制造商:Cooper Bussmann 功能描述:SD 100uH 0.65A 2Term SMT 7 7 4 制造商:COOPER BUSSMANN 功能描述:Ind Power Shielded Wirewound 100uH Ferrite 650mA
SD70404R7MAB 制造商:Abc Electronics 功能描述:IND,POWER,4.7UH,SMD
SD-704-HTA1 制造商:GC Electronics 功能描述: