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参数资料
| 型号： | SD800C40L |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 1065 A, 4000 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封装： | ROHS COMPLIANT, CERAMIC, BPUK-2 |
| 文件页数： | 2/8页 |
| 文件大小： | 162K |
| 代理商： | SD800C40L |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93553
2
Revision: 14-May-08
SD800C..L Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD800C..L
UNITS
24 TO 36
40 TO 45
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
1180 (550) 1065 (490)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
2280
2040
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
13 600
12 200
t = 8.3 ms
14 240
12 800
t = 10 ms
50 % VRRM
reapplied
11 440
10 250
t = 8.3 ms
11 980
10 750
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
925
745
kA2s
t = 8.3 ms
845
680
t = 10 ms
50 % VRRM
reapplied
654
526
t = 8.3 ms
597
480
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
9250
7450
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.90
1.06
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.10
1.18
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.38
0.44
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.34
0.41
Maximum forward voltage drop
VFM
Ipk = 2000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.66
1.95
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 150
°C
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.073
K/W
DC operation double side cooled
0.031
Mounting force, ± 10 %
14 700 (1500)
N (kg)
Approximate weight
255
g
Case style
See dimensions - link at the end of datasheet
DO-200AB (B-PUK)
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.009
0.006
TJ = TJ maximum
K/W
120°
0.011
90°
0.014
0.015
60°
0.020
0.021
30°
0.036
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