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参数资料
| 型号： | SD803C16S15CPBF |
| 元件分类： | 整流器 |
| 英文描述： | 845 A, 1600 V, SILICON, RECTIFIER DIODE |
| 封装： | B-43, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 163K |
| 代理商： | SD803C16S15CPBF |
SD803C..C Series
2
Bulletin I2069 rev. B 04/00
www.irf.com
Voltage
V
RRM
max. repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
T
J
= 125°C
VV
mA
04
400
500
SD803C..S10C
08
800
900
10
1000
1100
12
1200
1300
SD803C..S15C
14
1400
1500
16
1600
1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
45
Parameter
SD803C..C
Units
Conditions
Forward Conduction
KA
2s
A
I
F(AV)
Max. average forward current
845(420)
A
180° conduction, half sine wave.
@ Heatsink temperature
55(75)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS current
1326
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle
11295
t = 10ms
No voltage
non-repetitive forward current
11830
t = 8.3ms
reapplied
9500
t = 10ms
100% V
RRM
9945
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
640
t = 10ms
No voltage
Initial T
J = TJ max.
583
t = 8.3ms
reapplied
451
t = 10ms
100% V
RRM
412
t = 8.3ms
reapplied
I
2√t
Maximum I2
√t for fusing
6400
KA
2 √s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
1.02
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
V
F(TO)
2
High level of threshold voltage
1.32
(I >
π x I
F(AV)
), T
J
= T
J
max.
r
f1
Low level of forward slope resistance
0.38
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
r
f2
High level of forward slope resistance
0.28
(I >
π x I
F(AV)
), T
J
= T
J
max.
V
FM
Max. forward voltage
1.89
V
I
pk
= 2655A, T
J = 25°C, t
p
= 10ms sinusoidal wave
m
V
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 125°C
Recovery Characteristics
typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J = 25
oC
1000
25
- 30
S10
1.0
2.0
45
34
S15
1.5
3.2
87
51
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