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参数资料
| 型号： | SD823C12S30C |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 910 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, CERAMIC, B-43, PUK-2 |
| 文件页数： | 5/12页 |
| 文件大小： | 403K |
| 代理商： | SD823C12S30C |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93181
2
Revision: 14-May-08
SD823C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version),
810/910 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD823C..C
UNITS
S20
S30
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
810 (425)
910 (470)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
1500
1690
A
Maximum peak, one-cycle forward,
non-repetitive current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300
9600
t = 8.3 ms
9730
10 050
t = 10 ms
100 % VRRM
reapplied
7820
8070
t = 8.3 ms
8190
8450
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
432
460
kA2s
t = 8.3 ms
395
420
t = 10 ms
100 % VRRM
reapplied
306
326
t = 8.3 ms
279
297
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
4320
4600
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.00
0.95
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.11
1.06
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.80
0.60
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.76
0.57
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
2.20
1.85
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S20
2.0
1000
50
- 50
3.5
240
110
S30
3.0
5.0
380
130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
case junction to heatsink
RthJ-hs
DC operation single side cooled
0.076
K/W
DC operation double side cooled
0.038
Mounting force, ± 10 %
9800 (1000)
N (kg)
Approximate weight
83
g
Case style
See dimensions - link at the end of datasheet
B-43
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD823C16C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 810/910 A |
| SD823C16S20C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 810/910 A |
| SD823C16S30C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 810/910 A |
| SD823C20C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 810/910 A |
| SD823C20S20C | 功能描述:DIODE FAST REC 2000V 810A E-PUK RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
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