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| 型号： | SD845-T |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 143K |
| 描述： | DIODE SCHOTTKY 8A 45V DO-201AD |
| 标准包装： | 1,200 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 45V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 1mA @ 45V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 带卷 (TR) |
SD830 – SD860
Document number: DS23006 Rev. 7 - 2
1 of 3
www.diodes.com
September 2013
? Diodes Incorporated
SD830 –
SD860
8.0A SCHOTTKY BARRIER RECTIFIERS
Product Summary @T
A = +25°C
VRRM
(V) I
O
(A) V
FMAX
(V) I
RMAX (μA)
30, 40, 60 8 0.7 100
Description and Applications
8.0 A Schottky Barrier Rectifier in DO-201AD package, offers high
current capability and low forward voltage drop, designed with Guard
Ring for Transient Protection and high surge capacity.
Features and Benefits
?
High Current Capability and Low Forward Voltage Drop
?
High Surge Capacity
?
Guard Ring for Transient Protection
?
Low Power Loss, High Efficiency
?
Lead Free Finish, RoHS Compliant (Note 1 & 2)
Mechanical Data
?
Case: DO-201AD
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Bright
Tin. Solderable per MIL-STD-202,
Method 208
?
Polarity: Cathode band
?
Mounting Position: Any
?
Weight: 1.1 grams (approximate)
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol SD830 SD840 SD860 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30 40 60 V
RMS Reverse Voltage
VR(RMS)
21 28 42 V
Average Rectified Output Current (See Figure 1)
IO
8 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
175 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Lead (Note 3) TA
= +25°C R
θJL
30 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
VF
– 0.55 0.7 V IF
= 8A, T
J
= +25°C
Leakage Current
IR
– – 1.0 50
mA
mA
VR
= V
RRM, TJ
= +25°C
VR
= V
RRM, TJ
= +100°C
Typical Junction Capacitance (Note 4)
CJ
– 550 – pF VR
= 4V, f=1.0 MHz
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exempltions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Thermal resistance from junction to lead vertical PC board mounting, 9.5mm lead length.
4. Measured at 1.0MHz and applied reverse voltage of 4.0V.
Pb
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