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参数资料
| 型号： | SDA113GLUB |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 7.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | 1.500 X 0.875 INCH, 0.310 INCH HEIGHT, HERMETIC SEALED PACKAGE-5 |
| 文件页数： | 1/2页 |
| 文件大小： | 153K |
| 代理商： | SDA113GLUB |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDA113 __ __ __
│
└ Lead Bend 3/ __ = Straight Leads
UB = Up Bend
DB = Down Bend
│
└
Terminals 2/ 3/ L = Copper Leads
_ = Turret Terminals
└ Voltage A = 50 V
B = 100 V
C = 200 V
D = 400 V
E = 600 V
F = 800 V
G = 1000 V
SDA113 Series
7.5 A / 1000V
THREE PHASE BRIDGE
RECTIFIER ASSEMBLY
Features:
Higher Blocking Voltage Available. Contact Factory.
High Output Current 7.5 Amps
Low Reverse Leakage Current
Constructed with Void-free, Hermetically Sealed Discretes
Aluminum Case for Maximum Thermal Conductivity
Small Package Size (1.500 x 0.875 x 0.310”)
TX and TXV & S Level Screening Available
Fast, Ultra Fast, & Hyper Fast Versions Available.
Contact Factory.
Maximum Ratings
Symbol
Value
Units
Peak Repetitive and Peak Surge Reverse Voltage
VRRM
VRSM
VR
See Voltage Key
Volts
Average Rectified Forward Current 4/
(Resistive Load, 60 Hz Sine Wave)
TC = 55°C
TC = 100°C
Io
7.5
5.5
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, per leg)
IFSM
50
Amps
Operating & Storage Temperature
Top & Tstg
-55 to +150
C
Maximum Thermal Resistance, Junction to Case
RθJC
4.5
C/W
SDA113 ( L )
SDA113
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0047A
DOC
Lead Dia = .050”
Lead Length = 0.5” min
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