- 您现在的位置：买卖IC网 > PDF目录40118 > SDA12D8 (DIODES INC) UNIDIRECTIONAL, 12 ELEMENT, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | SDA12D8 |
| 厂商： | DIODES INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, 12 ELEMENT, SILICON, TVS DIODE |
| 封装： | DIP-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 654K |
| 代理商： | SDA12D8 |
ABSOLUTE MAXIMUM RATING (at Tamb=25°C unless otherwise stated)*
Steady-State Reverse Voltage
7V
Continuous Forward Current
50mA(1)
170mA(2)
Repetitive Peak Forward Current (3)
200mA(1)
1A(2)
Continuous Total Power Dissipation (4)
(SO or DIL packages)
625mW
Operating Free-air Temperature Range
0 to 70°C
Storage Temperature Range
-65 to 150°C
* Stresses beyond those listed above may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions beyond those
indicated under the recommended operating conditions is not implied. Exposure to absolute
maximum rated conditions for extended periods of time may affect device reliability.
Note:
(1) Any D terminal from Gnd or to VCC
(2) Total through all Gnd or VCC terminals
(3) These values apply for tW=100
s, duty cycle ≤ 20%
(4) For operation above 25°C , derate linearly at the rate of 6.25mW/°C
ELECTRICAL CHARACTERISTICS (at Tamb=25°C unless otherwise stated)
Single-Diode Operation
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Static Forward Voltage
VF
0.85
1.05
V
To VCC , IF=18mA
1.05
1.3
V
To VCC , IF=50mA
0.75
0.95
V
From Gnd, IF=18mA
0.95
1.2
V
From Gnd, IF=50mA
Peak Forward Voltage
VFM
1.45
V
IF=200mA
Static Reverse Current
IR
6
A
To VCC ,VR=7V
5
A
From Gnd, VR=7V
Total Capacitance
CT
616
pF
VR=0, f=1MHz
46
pF
VR=2V, f=1MHz
Note:
(5) Test conditions and limits apply separately to each of the diodes. The diodes not under test are
open circuited during the measurement of these characteristics.
Multiple-Diode Operation
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Internal Crosstalk Current
IX
0.8
2
mA
Total IF=1A (6)
0.02
0.2
mA
Total IF=198mA (6)
Note:
(6) IX is measured under the following conditions with one diode static, and all others switching.
Switching diodes: tW=100
s, duty cycle=0.2; static diode; VR=5V. The static diode input current is the
internal crosstalk current IX.
SDA12
4-4
相关PDF资料 |
PDF描述 |
|---|---|
| SDA160FT | 3 PHASE, 40 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE |
| SDA160BTTX | 3 PHASE, 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| SDA160BS | 3 PHASE, 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| SDA160ETS | 3 PHASE, 40 A, 250 V, SILICON, BRIDGE RECTIFIER DIODE |
| SDA160DTX | 3 PHASE, 40 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDA12H0B | 功能描述:DIP 开关/ SIP 开关 FLUSH ACT 12 POS RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
| SDA12H0BD | 功能描述:DIP 开关/ SIP 开关 FLUSH ACT 12 POS RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
| SDA12H0K | 功能描述:DIP 开关/ SIP 开关 FLUSH ACT 12 POS RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
| SDA12H0KD | 功能描述:DIP 开关/ SIP 开关 FLUSH ACT 12 POS RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
| SDA12H0SB | 功能描述:DIP 开关/ SIP 开关 FLUSH ACT 12 POS RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
发布紧急采购，3分钟左右您将得到回复。