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参数资料
| 型号： | SDFFS12 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 165K |
| 代理商： | SDFFS12 |
Peak Recurrent Reverse Voltage (V)
Maximum Average Forward Rectifier current at TL
8.3 ms. peak forward current
Operating temperature range
Storage temperature range
SDFMS12......SDFMS110
Dimensions in mm.
Maximum Ratings, according to IEC publication No.134
VRRM
I(AV)
IFSM
Tj
TSTG
1.0 A
30 A
65 to + 125 oC
65 to + 150 oC
Electrical Characteristics at Tamb = 25 °C
VF
Max. forward voltage drop at IF = 1.0 A (Note 1)
IR
0.4 m A
10 mA
0.5 V
Max. reverse DC current
at Rated DC Blocking Voltage
Rth(j-a) Maximum thermal resistance junction to ambient (Note 2)
28 °C/W
and T = 25 oC
and T = 100 oC
Glass Passivated Junction
Package: DF-S for surface mount package and
DF-M for Dual in Line.
Ideal for PCB
Lead and polarity identifications
SDFMS12
20
SDFMS14
40
Voltage
20 to 100 V.
Current
1.0 Amp.
DF - S
(Jedec Method)
Dec - 08
Maximum RMS Voltage (V)
VRMS
14
28
1.0 Amp. Schottky Barrier Rectifiers
SDFMS16
60
42
0.80 V
Metal to silicon rectifier, majority carrier
Low forward voltage drop
High surge current capability
Laboratory Classification 94V-0
High temperature soldering:
Small size, single installation lead solderable
per MIL-STD-202 Method 208
260°C / 10 seconds at terminals
SDFMS110
SDFMS12
WWY
DF - M
SDFSS12......SDFSS110
SDFSS12
SDFSS14
SDFSS16 SDFSS110
100
70
0.75 V
0.05 mA
5 mA
0.5 mA
SDFSS1X
2 = 20V
4 = 40V
6 = 60V
10 = 100V
65 to + 150 oC
Rth(j-l) Maximum thermal resistance junction to lead
88 °C/W
Cj
Typical Junction Capacitance (Note 3)
50 pF
NOTES: 1. Pulse Test With PW = 300 sec, 1% Duty Cycle
2. Measured on P.C. Board with 12mm x 12mm Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0 D.C.
Maximum DC Blocking Voltage
VDC
20
40
60
100
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