参数资料
型号: SDM20U30LP-7
厂商: Diodes Inc
文件页数: 2/4页
文件大小: 154K
描述: DIODE SCHOTTKY 30V 2-DFN
其它图纸: DFN1006-2 Side
DFN1006-2 Bottom
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 575mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 150µA @ 30V
电容@ Vr, F: 20pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: 2-XFDFN
供应商设备封装: 2-DFN1006(1.0x0.6)
包装: 标准包装
产品目录页面: 1595 (CN2011-ZH PDF)
其它名称: SDM20U30LPDIDKR
SDM20U30LP
Document number: DS30589 Rev. 11 - 2
2 of 4
www.diodes.com
December 2012
? Diodes Incorporated
SDM20U30LP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
RMS Reverse Voltage
VR(RMS)
21 V
Maximum (Peak) Forward Current
IFM
200 mA
Peak Forward Surge Current 8.3ms Half Sine
IFSM
1.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
PD
250 mW
Thermal Resistance, Junction to Ambient Air
RθJA
400
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +125
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Breakdown Voltage (Note 5)
V(BR)R
30
?
?
V
IR
= 150
μA
Forward Voltage Drop
VF
?
?
350
575
mV
IF = 20mA
IF = 200mA
Peak Reverse Current (Note 5)
IR
?
?
150
30
μA
μA
VR
= 30V
VR
= 10V
Total Capacitance
CT
?
20
?
pF
VR
= 0V, f = 1.0MHz
Notes: 5. Short duration pulse test used to minimize self-heating effect.
.001
0200400 600
.01
.1
1
10
1,000
100
800
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
Fig. 1 Typical Forward Characteristics
I , INS
T
AN
T
ANE
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(mA)
F
T = 25°CA
T = 75°CA
T = 125°CA
T = -25°CA
0
5
10
15
20
25
30
I, I
N
S
T
A
N
T
A
N
E
O
U
S
R
EVE
R
SE
C
U
R
R
E
N
T
(A)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)R
Fig. 2 Typical Reverse Characteristics
100n
10m
1m
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