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参数资料
| 型号： | SDP8436-004 |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 452K |
| 代理商： | SDP8436-004 |
Silicon Phototransistor
SDP8436
DESCRIPTION
FEATURES
Side-looking plastic package
18 (nominal) acceptance angle
Enhanced coupling distance
Internal visible light rejection filter
Low profile for design flexibility
Wide sensitivity ranges
Mechanically matched to SEP8736 infrared
emitting diode
The SDP8436 is an NPN silicon phototransistor molded
in a black plastic package which combines the mounting
advantages of a side-looking package with the narrow
acceptance angle and high optical gain of a T- 1
package. The SDP8436 is designed for those
applications which require longer coupling distances
than standard side- looking devices can provide, such
as touch screens. The device is also well suited to
applications in which adjacent channel crosstalk could
be a problem. The package is highly transmissive to the
IR source energy while it provides effective shielding
against visible ambient light.
DIM_019.ds4
INFRA-82.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SDP8436-2TR | 功能描述:光电晶体管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8436-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW; Transistor Polarity:NPN; Power Consumption:100mW; Viewing Angle:18; No. of Pins:2 ;RoHS Compliant: Yes |
| SDP8436-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW |
| SDP8436-3TR | 功能描述:光电晶体管 Infrared Sensors RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8475-201 | 功能描述:光电晶体管 Low Light Rejection Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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