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参数资料
| 型号： | SDR100S40TX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 100 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 |
| 封装： | HERMETIC SEALED PACKAGE-1 |
| 文件页数： | 1/3页 |
| 文件大小： | 87K |
| 代理商： | SDR100S40TX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0153A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR100S__
__ __
│
└
│
└
└ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Pin Configuration (See Table 1)
__ = Normal (Cathode to Stud)
R = Reverse (Anode to Stud)
Family/Voltage
20 = 200V
30 = 300V
40 = 400V
50 = 500V
SDR100S20
thru
SDR100S50
100 Amp
STANDARD RECOVERY
HIGH POWER RECTIFIER
200-500 Volt
5 sec
Features:
Low Reverse Leakage Current
Single Chip Construction
PIV to 500V
Hermetically Sealed
Low Thermal Resistance
Higher Voltage Devices Up to 1KV Available*
Fast and Ultra Fast Recovery Versions Available*
For Reverse Polarity Add Suffix “R”
TX, TXV, and S-Level Screening Available
2/
*Contact Factory
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse
and DC Blocking Voltage
SDR100S20
SDR100S30
SDR100S40
SDR100S50
VRRM
VRWM
VR
200
300
400
500
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25°C)
Io
100
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IFSM
1000
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +200
C
Maximum Total Thermal Resistance
Junction to Case
RJC
0.85
C/W
Notes:
1/ For ordering information, price, operating curves, and availability- contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
DO-5
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