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参数资料
| 型号： | SDR10MTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 154K |
| 代理商： | SDR10MTX |
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
SYMBOL
VALUE
UNIT
MAX
Instantaneous Forward Voltage Drop
IF = 10.0 Adc, 300-500μs pulse
TA = +25°C
TA = -55°C
VF1
VF2
1.25
1.40
Vdc
Reverse Leakage Current
Rated VR, 300μs pulse minimum
TA = +25°C
TA =+100°C
IR1
IR2
5
200
μA
Junction Capacitance
VR = 10 Vdc, f = 1MHz, TA = 25°C
CJ
80
pF
Reverse Recovery Time
IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
trr
5
s
Package Outlines:
DIMENSIONS (inches)
DIM.
Minimum
Maximum
DIM.
Minimum
Maximum
A
---
.170
A
.170
.180
B
.210
.250
B
.260
.300
C
.037
.043
C
.020
.030
D
1.000
---
D
.002
---
AXIAL
SMS
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
4/
IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR10D thru SDR10M
and
SDR10DSMS thru SDR10MSMS
Series
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00001B
DOC
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