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参数资料
| 型号： | SDR1308SMSTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 138K |
| 代理商： | SDR1308SMSTXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR130 _6_ __ __ __
L Processing
= None
or TX , TXV, S
L Package
= Axial
SMS = Surface Mount
L Lead Dia
= .050" standard
A = .040" special order
L Voltage
4 = 400 V
6 = 600 V
8 = 800 V
Axial Leaded
Surface Mount (SMS)
SDR1304 thru SDR1308
SDR1304SMS thru SDR1308SMS
3 AMP, 400 – 800 Volts
70 nsec, Ultra Fast Rectifier
Features:
Ultra Fast Recovery: 70 nsec @ 25°C,
PIV to 700 Volts
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Low Forward Voltage Drop
Single Chip Construction
Replaces UES 1304 Types
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR1304
SDR1306
SDR1308
VRRM
VR
400
600
800
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
Io
3.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25C)
IFSM
75
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +175
C
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
RθJL
RθJE
20
14
C/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0095C
DOC
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