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参数资料
| 型号： | SDR1ASM-S |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, SM, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 156K |
| 代理商： | SDR1ASM-S |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR1 __ __ __
│
└
│
└
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level (for SM, use –S)
Package Type
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
Voltage A = 50 V
J = 600 V
B = 100 V
K = 800 V
D = 200 V
M = 1000 V
G = 400 V
SDR1ASM & SMS
thru
SDR1MSM & SMS
1.0 AMPS
50 ─ 1000 VOLTS
50 – 70 nsec ULTRA FAST RECTIFIER
FEATURES:
Ultra Fast Recovery: 50-70 ns Max @ 25C 4/
80-120 ns Max @ 100C 4/
Single Chip Construction
PIV to 1000 Volts (1200V Version available)
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Round and Square Tab Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available 2/
Hyper Fast Version available
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
SDR1A ..
SDR1B ..
SDR1D ..
SDR1G ..
SDR1J ..
SDR1K ..
SDR1M ..
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25C)
IO
1
Amp
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25C)
IFSM
25
Amps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
C
Thermal Resistance, Junction to End Tab
SM & SMS
RθJE
28
C/W
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
SM (Round Tab)
SMS (Square Tab)
相关PDF资料 |
PDF描述 |
|---|---|
| SDR1DSM-S | 1 A, 200 V, SILICON, SIGNAL DIODE |
| SDR1KSM-S | 1 A, 800 V, SILICON, SIGNAL DIODE |
| SDR1BSMTXV | 1 A, 100 V, SILICON, SIGNAL DIODE |
| SDR1DSMSTX | 1 A, 200 V, SILICON, SIGNAL DIODE |
| SDR1GSMSTX | 1 A, 400 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDR1B | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:1 AMP ULTRA FAST RECOVERY RECTIFIER 50-1200 VOLTS |
| SDR1BHF | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:Hyper Fast Recovery Rectifier |
| SDR1BHFS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
| SDR1BHFSMS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
| SDR1BHFSMSS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:1AMPS, 50thru 1200VOLTS 35nsec Hyper Fast Recovery Rectifier |
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