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参数资料
| 型号： | SDR1JSMMTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 235K |
| 代理商： | SDR1JSMMTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1ASM, SMM, & SMS
thru
SDR1MSM, SMM, & SMS
ELECTRICAL CHARACTERISTICS 3/
Maximum Limit
Package
CHARACTERISTICS
SYMBOL
SMM
SM
SMS
UNIT
SDR1A .. thru SDR1D ..
0.96
1.3
0.96
SDR1G .. thru SDR1J ..
2.7
1.3
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 μs Pulse, TA = 25°C)
SDR1K .. thru SDR1M ..
VF1
2.7
2.5
1.9
Vdc
SDR1A .. thru SDR1D ..
1.05
1.45
2.1
SDR1G .. thru SDR1J ..
2.85
1.45
2.1
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 μs Pulse, TA = -55°C)
SDR1K .. thru SDR1M ..
VF2
2.85
2.65
2.3
Vdc
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
SDR1K .. thru SDR1M ..
IR1
5
μA
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
SDR1K .. thru SDR1M ..
IR2
250
μA
SDR1A .. thru SDR1D ..
20
15
40
SDR1G .. thru SDR1J ..
10
15
25
Junction Capacitance
(VR = 10Vdc, TA = 25°C , f = 1MHz)
SDR1K .. thru SDR1M ..
CJ
10
15
pf
SDR1A .. thru SDR1D ..
50
SDR1G .. thru SDR1J ..
60
Reverse Recovery Time 4/
SDR1K .. thru SDR1M ..
trr
70
ns
DIMENSIONS
DIM.
MIN. MAX.
DIM.
MIN.
MAX.
A
.095” .105”
A
.134” .153”
B
.190” .210”
B
.200” .280”
C
.010” .030”
C
.022” .028”
Round Tab Surface Mount (SM):
D
---
D
.002”
---
DIMENSIONS
DIM.
MIN. MAX.
A
.075” .085”
B
.135” .145”
C
.010” .030”
Mini (SMM):
D
---
Square Tab Surface Mount (SMS) :
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003E
DOC
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相关代理商/技术参数 |
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| SDR1JSMS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER |
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