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参数资料
| 型号： | SDR2UF2.0SMSTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 2000 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, SMS, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 121K |
| 代理商： | SDR2UF2.0SMSTXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0063E
DOC
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR2UF
___ ___ ____
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Package Type
___ = Axial
SMS = Surface Mount Square
Tab
│
└
Voltage/Family
1.8 = 1800V
2 = 2000V
SDR2UF1.8 and SMS
SDR2UF2.0 and SMS
2 AMPS
1800 - 2000 VOLTS
70 nsec
ULTRA FAST RECOVERY
RECTIFIER
FEATURES:
Ultra Fast Recovery: 70 nsec maximum
PIV to 2400 Volts
Low Reverse Leakage Current
Hermetically Sealed
Low Thermal Resistance
Low trr Change at High Temperature
(typical: trr = 120ns @ 100°C)
TX, TXV, and Space Level Screening Available
2/
Fast Recovery Versions Available. Contact Factory.
Single Junction Construction
Replaces 1N6512 and 1N6513 in many applications.
MAXIMUM RATINGS
Symbol
Value
Units
Reverse Voltage
SDR2UF1.8 & SMS
SDR2UF2.0 & SMS
VRRM
VRWM
VR
1800
2000
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA=25
oC)
IO
2
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to
Reach Equilibrium between Pulses, TA=25
oC)
IFSM
30
Amps
Temperature Range
Operating
Storage
TOP
Tstg
-65 to +175
-65 to +200
oC
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount)
RθJL
RθJE
6
4
oC/W
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial
Surface Mount
Square Tab (SMS)
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