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参数资料
| 型号： | SDR4NTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | SDR4NTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDR4 __ __ __
L Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Package
___ = Axial
SMS = Surface Mount Square Tab
L
Voltage
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
N = 1200 V
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
3 AMP
400 – 1200 Volts
50-80 nsec
ULTRA FAST RECTIFIER
Features:
Ultra Fast Recovery: 50-80 nsec Max. @ 25°C
85-125 nsec Max. @ 100°C
Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial Leaded & Surface Mount versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR4G
SDR4J
SDR4K
SDR4M
SDR4N
VRRM
VRWM
VR
400
600
800
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
Io
3
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25C)
IFSM
75
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +175
C
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
RθJL
RθJE
20
14
C/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and
Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
Axial Leaded
SMS (Square)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
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