- 您现在的位置：买卖IC网 > PDF目录40129 > SDR55U120CAPS (SOLID STATE DEVICES INC) 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 PDF资料下载
参数资料
| 型号： | SDR55U120CAPS |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 101K |
| 代理商： | SDR55U120CAPS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR55U ___ ___ ___ ___
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└
Package Type
M = TO-254
N = TO-258
P = TO-259
│
└
Configuration
CT = Common Cathode
CA = Common Anode
D = Doubler
DR = Doubler Reverse
│
└
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
SDR55U080CT thru
SDR55U120CT Series
55 AMP
ULTRA FAST COMMON CATHODE
RECTIFIER
800 -1200 Volts
50 nsec
Features:
Ultra Fast Recovery: 35 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Common Anode and Doubler versions
TX, TXV, Space Level Screening Available Consult
Factory.
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR55U080
SDR55U090
SDR55U100
SDR55U110
SDR55U120
VRRM
VRWM
VR
800
900
1000
1100
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
3/4/
Io
55
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium
Between Pulses, TA = 25C)
IFSM
250
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
C
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case
3/
RθJE
1.25
1.0
C/W
TO-254 (M)
TO-258 (N)
TO-259 (P)
1/ For ordering information, price, operating curves, and
availability - Contact factory.
2/ Screening based on MIL-PRF-19500. Screening
flows available on request.
3/ Both legs tied together.
4/ Package limited.
相关PDF资料 |
PDF描述 |
|---|---|
| SDR55U120DN | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR55U090DRMS | 55 A, 900 V, SILICON, RECTIFIER DIODE, TO-254AA |
| SDR55U110DRMTXV | 55 A, 1100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| SDR55U120DRMTX | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA |
| SDR55U080CANS | 55 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDR560S | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR560SF | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR560SF_09 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR5650-472M | 制造商:Bourns Inc 功能描述: |
| SDR5712A2GW | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:16 VOLTS GENERAL PURPOSE SILICON RECTIFIER |
发布紧急采购，3分钟左右您将得到回复。