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参数资料
| 型号： | SDR60U120DPTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 90K |
| 代理商： | SDR60U120DPTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0145A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60F080CT
thru
SDR60U120CT Series
Electrical Characteristics (per leg)
Symbol
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF1
1.65
1.75
1.90
2.10
1.80
1.90
2.15
2.50
Volts
Instantaneous Forward Voltage Drop
(TA = -55C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF2
1.75
1.80
1.95
2.10
––
1.95
2.25
––
Volts
Instantaneous Forward Voltage Drop
(TA = 125C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF3
1.75
1.30
1.65
1.95
––
1.5
1.95
––
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300 μsec pulse minimum)
IR1
50
250
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 μsec pulse minimum)
IR2
3
––
mA
Reverse Leakage Current
(Rated VR, TA = 125C, 300 μsec pulse minimum)
IR3
10
25
mA
Reverse Leakage Current
(Rated VR, TA = 150C, 300 μsec pulse minimum)
IR4
25
––
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25C, f = 1MHz)
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
100
85
––
150
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
TA = 25C
TA = 100C
trr
40
120
55
––
nsec
Case Outline: TO-258
Case Outline: TO-259
Note 1: Pin 2&3 connected together
PIN ASSIGNMENT
Code
Function
Pin 1
Pin 2
Pin 3
CT
Common Cathode
Anode 1
Cathode
Anode 2
CA
Common Anode
Cathode 1
Anode
Cathode 2
D
Doubler
Anode 1
Cathode / Anode
Cathode 2
DR
Doubler Reverse
Cathode 1
Anode / Cathode
Anode 2
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