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参数资料
| 型号： | SDR647CTS1TXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 50 A, 700 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, SMD1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 76K |
| 代理商： | SDR647CTS1TXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0087D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
SDR64 ___ CT
___ ___
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Package
S1= SMD1
│
└
Voltage/Family
3 = 300 V
4 = 400 V
5 = 500 V
6 = 600 V
7 = 700 V
SDR643CTS1
thru
SDR647CTS1
50 AMP
300-700 Volts
35 nsec
Ultra Fast
Centertap Rectifier
Features:
Ultra Fast Recovery: 25 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Power Surface Mount Package
Ceramic Seals Available
Higher Currents & Voltages Available – Contact Factory
TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR643CTS1
SDR644CTS1
SDR645CTS1
SDR646CTS1
SDR647CTS1
VRRM
VRWM
VR
300
400
500
600
700
Volts
Average Rectified Forward Current note 3
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
Io
50
Amps
Peak Surge Current
note 3
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25C)
IFSM
500
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
C
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case, note 3
RθJC
2.00
1.20
C/W
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500; contact factory for screening flow.
3/ Both legs tied together
*Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC –
Consult Factory
SMD1
相关PDF资料 |
PDF描述 |
|---|---|
| SDR647CTS1 | 50 A, 700 V, SILICON, RECTIFIER DIODE |
| SDR646CTS1TX | 50 A, 600 V, SILICON, RECTIFIER DIODE |
| SDR643CTS1TXV | 50 A, 300 V, SILICON, RECTIFIER DIODE |
| SDR643CTS1 | 50 A, 300 V, SILICON, RECTIFIER DIODE |
| SDR646CTS1TXV | 50 A, 600 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDR647CTZ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40AMPS 600 - 700 VOLTS 60 nsec ULTRA FAST CENTERTAP RECTIFIER |
| SDR648CT | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40 AMP 700 -800 VOLTS 60 nsec ULTRA FAST CENTERTAP RECTIFIER |
| SDR648CT-28 | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:2AMPS 700-800VOLTS 60nsec ULTRA FAST CENTERTAP RECTIFIER |
| SDR64CAJ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR64CAM | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
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