- 您现在的位置：买卖IC网 > PDF目录54473 > SDR6643SMSS (SOLID STATE DEVICES INC) 0.3 A, 50 V, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | SDR6643SMSS |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, SMS, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 112K |
| 代理商： | SDR6643SMSS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0126B
DOC
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
SYMBOL
LIMIT
UNIT
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C) @ IF = 10mA
SDR6638
SDR6642
SDR6643
SDR4150
VF1
0.8
1.0
0.74
Vdc
SDR6638 @ IF = 200mA
SDR6642 @ IF = 100mA
SDR6643 @ IF = 100mA
SDR4150 @ IF = 100mA
VF2
1.1
1.2
0.92
Vdc
Maximum Instantaneous Forward Voltage Drop (Pulsed)
IF = 100mA, TA = -55°C
VF3
1.3
Vdc
Minimum Breakdown Voltage
Ir = 100 μA
SDR6638
SDR6642
SDR6643
SDR4150
BVR
125
100
75
Vdc
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SDR6638 @ VR = 20V
SDR6642 @ VR = 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
IR1
35
25
50
100
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SDR6638 @ VR = 100V
SDR6642 @ VR = 75V
SDR6643 @ VR = 50V
IR2
500
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SDR6638 @ VR = 20V
SDR6642 @ VR = 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
IR3
50
75
100
μA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SDR6638 @ VR = 100V
SDR6642 @ VR = 75V
SDR6643 @ VR = 50V
IR4
100
160
μA
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
SDR6638
SDR6642
SDR6643
SDR4150
CJ1
2.5
5.0
2.5
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
SDR6638
SDR6642
SDR6643
CJ2
2.0
2.8
pf
Maximum Reverse Recovery Time
(IF = IR = 10 mA, IRR = 1 mA)
SDR6638
SDR6642
SDR6643
SDR4150
trr
4.5
5.0
6.0
4.0
nsec
AXIAL
DIMENSIONS
DIM
MIN
MAX
A
.056”
.080”
B
.130”
.180”
C
1.00”
1.50”
D
.018”
.022”
SM
DIMENSIONS
DIM
MIN
MAX
A
.056”
.064”
B
.130”
.146”
C
.010”
.022”
SMS
DIMENSIONS
DIM
MIN
MAX
A
.070”
.085”
B
.180”
.210”
C
.022”
.028”
D
.001”
---
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
相关PDF资料 |
PDF描述 |
|---|---|
| SDR955N | 75 A, 500 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR953P | 75 A, 300 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR9JFASMS | 9 A, 600 V, SILICON, RECTIFIER DIODE |
| SDR9JFSMSTXV | 9 A, 600 V, SILICON, RECTIFIER DIODE |
| SDS10U60DN | 10 A, 600 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDR66CAJ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CAM | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CAZ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CTJ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CTM | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
发布紧急采购，3分钟左右您将得到回复。