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参数资料
| 型号： | SDR6643SMTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, SM, MELF-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 112K |
| 代理商： | SDR6643SMTX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0126B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR____ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level (for SM, use –S)
│
└ Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
(MELF)
SMS = Surface Mount Square Tab
│
└
Device Type ( VRWM )
6638 = 125 V
6642 = 75 V
6643 = 50 V
4150 = 75 V
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
300 mA
50 - 125 VOLTS
4.5 - 6.0 nsec HYPER FAST RECOVERY
RECTIFIER
FEATURES:
Hyper Fast Reverse Recovery Time 4.5 - 6 ns
Max
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Available in Axial, Subminiature Round Tab
& Subminiature Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Replacement for 1N6638, 1N6642, 1N6643, &
1N4150-1
Metallurgical Class 3 Bond
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SDR6638
SDR6642
SDR6643
SDR4150
VRWM
VR
125
75
50
75
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
IO
300
mAmps
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
IFSM
2.5
Amps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°C
Thermal Resistance
SM and SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
RθJE
RθJL
100
325
°C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics
@25C.
Axial Leaded
SM
SMS
相关PDF资料 |
PDF描述 |
|---|---|
| SDR6638S | 0.3 A, 125 V, SILICON, SIGNAL DIODE |
| SDR6642SMS | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| SDR6643SMSS | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| SDR955N | 75 A, 500 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR953P | 75 A, 300 V, SILICON, RECTIFIER DIODE, TO-259 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDR66CAJ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CAM | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CAZ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CTJ | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
| SDR66CTM | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
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