参数资料
型号: SDR9511S2TX
厂商: SOLID STATE DEVICES INC
元件分类: 参考电压二极管
英文描述: 50 A, 1100 V, SILICON, RECTIFIER DIODE
封装: HERMETIC SEALED, SMD2, 3 PIN
文件页数: 1/3页
文件大小: 102K
代理商: SDR9511S2TX
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0113C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SDR __
__
__ __
└ Screening
2/
___ = Not Screened
TX
= TX Level
TXV = TXV Level
S
= S Level
Lead Options
__= Straight Leads
DB = Bent Down
UB = Bent Up
Package
N = TO-258
P = TO-259
S2 = SMD2
Family/Voltage
958 = 800V
959 = 900V
9510 = 1000V
9511 = 1100V
9512 = 1200V
SDR958 thru SDR9512
Series
50 AMP
800 -1200 Volts
100 nsec
Ultrafast Recovery
Rectifier
Features:
Ultra Fast Recovery: 80 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Faster Recovery Times Available – Contact Factory
TX, TXV, Space Level Screening Available - Consult
Factory
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR958
SDR959
SDR9510
SDR9511
SDR9512
VRRM
VRWM
VR
800
900
1000
1100
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
3/
Io
50
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow
Junction to Reach Equilibrium Between Pulses, TA = 25C)
3/
IFSM
500
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
C
Maximum Thermal Resistance
Junction to Case3/
N&P
SMD2
RθJC
0.45
0.3
C/W
Notes:
1/ For Ordering Information, Price, Operating
Curves, and Availability - Contact Factory
2/ Screening per MIL-PRF-19500
3/ Pins 2&3 connected
TO-258
TO-259
SMD2
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SDR9511S2UB 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier
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