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参数资料
| 型号： | SDR956MUS |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 81K |
| 代理商： | SDR956MUS |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR95 __ __ __ __
+ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
+ Leg Bend Option
(See Figure 1)
+
Package M = TO-254, Z = TO-254Z
+ Voltage 3 = 300V, 4 = 400V,
5 = 500V, 6 = 600V.
SDR953M & Z
Thru
SDR956M & Z
50A, 35nsec, 300-600 V
Hyper Fast Rectifier
Features:
Hyper Fast Recovery: 35nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Low Profile Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Ceramic Seal for Improve d Hermeticity Available
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
SDR953M & Z
SDR954M & Z
SDR955M & Z
SDR956M & Z
VRRM
VRWM
VR
300
400
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Io
50
Amps
Peak Surge Current
5/
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
4/
IFSM
450
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +200
C
Maximum Total Thermal Resistance
Junction to Case
RθJC
0.7
C/W
-
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF =.5 Amp, IR = 1A, IRR = .25A.
4/ Pins 2 and 3 Tied Together.
5/ Available with higher surge ratings.
-
TO-254 (M)
-
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0029C
DOC
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