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参数资料
| 型号： | SDR9TSMSTXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 9 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 69K |
| 代理商： | SDR9TSMSTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0136A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR9 __ __ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└ Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
│
└ Recovery Time
__ = Standard Recovery
│
└ Voltage/Family
P = 1300V
R = 1400V
T = 1500V
SDR9P thru SDR9T
Series
9.0 AMP
STANDARD RECOVERY
RECTIFIER
1300 ─ 1500 VOLTS
FEATURES:
PIV to 1500 Volts
Hermetically Sealed
Low Reverse Leakage Current
Single Chip Construction
Replaces Larger DO-4 Rectifiers
Low Thermal Resistance
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Fast,and Ultra Fast Versions Available-
Contact Factory
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
SDR9P
SDR9R
SDR9T
VRRM
VRWM
VR
1300
1400
1500
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TA = 25°C )
IO
9.0
Amps
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
IFSM
130
Amps
Operating & Storage Temperature
TJ and
TSTG
-65 to +175
°C
Thermal Resistance
Junction to Lead for Axial, L =.125"
Junction to End Tab for Surface Mount
RθJL
RθJE
8
4
°C/W
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
Axial Leaded
SMS
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