参数资料
型号: SE07PJ-M3/84A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.7 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 1/5页
文件大小: 81K
代理商: SE07PJ-M3/84A
Document Number: 89023
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifiers
SE07PB thru SE07PJ
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
General
purpose,
polarity
protection,
and
rail-to-rail
protection in both consumer and automotive applications.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Oxide planar chip junction
Low forward voltage drop
Typical IR less than 0.1 μA
ESD capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
0.7 A
VRRM
100 V to 600 V
IR
5 μA
VF at IF = 1.0 A
0.865 V
TJ max.
175 °C
DO-220AA (SMP)
eSMP
Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE07PB
SE07PD
SE07PG
SE07PJ
UNIT
Device marking code
07B
07D
07G
07J
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
Average forward current
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相关PDF资料
PDF描述
SE07PG-M3/84A 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA
SE07PD-M3/84A 0.7 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA
SE10PB-M3/85A 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA
SE10PD-M3/84A 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA
SE10PD-M3/85A 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA
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