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参数资料
| 型号： | SE1470-001 |
| 元件分类： | 红外LED |
| 英文描述： | 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件页数： | 1/4页 |
| 文件大小： | 379K |
| 代理商： | SE1470-001 |
AlGaAs Infrared Emitting Diode
SE1470
DESCRIPTION
FEATURES
Compact metal can coaxial package
24 (nominal) beam angle
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55C to +125C)
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
.106(2.69)
DIA
.076(1.93)
ANODE
MIN
.095(2.41) DIA
.020(0.51)
DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
CATHODE (CASE)
DIM_001a.ds4
SE1470-XXX
.106(2.69)
DIA
.076(1.93)
ANODE
CATHODE
TYPICAL MIN
.095(2.41) DIA
.020
(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
.020
(0.51) DIA
~
~~
DIM_001b.ds4
SE1470-XXXL
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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相关PDF资料 |
PDF描述 |
|---|---|
| SE1470-002 | 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| SE1470-003 | 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| SE2470-002 | INFRARED LED |
| SE301A | 4.6 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| SE308-T | 1 ELEMENT, INFRARED LED, 940 nm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SE1470-001L | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE1470-002 | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE1470-002L | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE1470-003 | 功能描述:红外发射源 1.8V 50mA 880nm Infrared Emittn Diod RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE1470-003L | 功能描述:红外发射源 AlGaAs Emiting Diode Mtl Can Coaxial Pkg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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