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参数资料
| 型号： | SE15PG-E3/85A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 99K |
| 代理商： | SE15PG-E3/85A |
New Product
SE15PB thru SE15PJ
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89025
Revision: 21-Feb-08
2
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
Notes:
(1) Immunity to IEC-61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
SE15PB
SE15PD
SE15PG
SE15PJ
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
105
25
30
°C/W
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 k
Ω
VC
H3B
> 8 kV
AEC Q101-002
Machine model (contact mode)
C = 200 pF, R = 0
Ω
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 150 pF, R = 1.5 k
Ω
3B
> 8 kV
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0
Ω
C
> 400 V
IEC-61000-4-2 (2)
Human body model (contact mode)
C = 150 pF, R = 150
Ω
4> 8 kV
Human body model (air-discharge mode) (1)
C = 150 pF, R = 150
Ω
4
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SE15PJ-E3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SE15PJ-E3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
0.5
1.0
1.5
2.0
0
25
50
75
100
125
175
150
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
T
L Measured
at the Cathode Band Terminal
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics
0.2
0
0.4
0.8
0.6
1.2
1.4
1.0
1.6
1.8
0
0.2
0.4
0.8
0.6
1.2
1.0
1.6
1.8
1.4
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
相关PDF资料 |
PDF描述 |
|---|---|
| SE15PJ-E3/84A | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE15PD-E3/85A | 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE15PG-E3/84A | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE15PB-E3/84A | 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE2460-003 | INFRARED LED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SE15PGHM3/84A | 功能描述:整流器 400 Volt 1.5 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SE15PGHM3/85A | 功能描述:整流器 400 Volt 1.5 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SE15PG-M3/84A | 功能描述:整流器 400 Volt 1.5 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SE15PG-M3/85A | 功能描述:整流器 400 Volt 1.5 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SE15PJ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers |
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