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参数资料
| 型号： | SE2470-002 |
| 元件分类： | 红外LED |
| 英文描述： | 1 ELEMENT, INFRARED LED, 880 nm |
| 文件页数： | 1/4页 |
| 文件大小： | 395K |
| 代理商： | SE2470-002 |
AlGaAs Infrared Emitting Diode
SE2470
DESCRIPTION
FEATURES
Miniature, hermetically sealed, pill style, metal
can package
18 (nominal) beam angle
Wide operating temperature range
(- 55C to +125C)
Higher power output than GaAs at equivalent
drive currents
Ideal for direct mounting to printed circuit boards
880 nm wavelength
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
The SE2470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a
hermetically sealed, glass lensed, metal can package.
This package directly mounts in double sided PC
boards. These devices typically exhibit 70% greater
power intensity than gallium arsenide devices at the
same forward current.
DIM_002.ds4
INFRA--1.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
20
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PDF描述 |
|---|---|
| SE2470-001 | 1 ELEMENT, INFRARED LED, 880 nm |
| SE307-C | 4.8 mm, 1 ELEMENT, INFRARED LED, 940 nm |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SE2470-002 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE |
| SE2470-105 | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE-24A015C | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:SOLID STATE RELAY MAXIMUM LOAD CURRENT 1.5 A / 2A |
| SE-24A015F | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:SOLID STATE RELAY MAXIMUM LOAD CURRENT 1.5 A / 2A |
| SE-24A015VC | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:SOLID STATE RELAY MAXIMUM LOAD CURRENT 1.5 A / 2A |
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