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参数资料
| 型号： | SE3455-003 |
| 元件分类： | 红外LED |
| 英文描述： | 3.77 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 文件页数： | 2/4页 |
| 文件大小： | 470K |
| 代理商： | SE3455-003 |
GaAs Infrared Emitting Diode
SE3455/5455
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3 A
(1s pulse width, 300 pps)
Power Dissipation
150 mW []
Operating Temperature Range
-55C to 125C
Storage Temperature Range
-65C to 150C
Soldering Temperature (10 sec)
260C
Notes
1. Derate linearly from 25C free-air temperature at the rate of
1.43 mW/C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
29
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SE3455-003 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE |
| SE3455-004 | 功能描述:红外发射源 GaAs Infrared Emitting Diode RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SE3464F | 制造商:Endicott Research Group Inc (ERG) 功能描述:8M CLASS DC TO AC INVERTER 制造商:Endicott Research Group (ERG) 功能描述:8M CLASS DC TO AC INVERTER |
| SE3470 | 制造商:HONEYWELL 制造商全称:Honeywell Solid State Electronics Center 功能描述:AlGaAs Infrared Emitting Diode |
| SE3470-001 | 功能描述:红外发射源 GaAs Infrared Emitting Diode RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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