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参数资料
| 型号： | SE6L |
| 厂商： | RECTRON LTD |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/7页 |
| 文件大小： | 351K |
| 代理商： | SE6L |
NUMBER OF CYCLES AT 60Hz
PEAK
FORWARD
SURGE
CURRENT,
(A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
1
3
2
5
10
20
INSTANTANEOUS
FORWARD
CURRENT,
(A)
1.0
0.3
0.1
0.03
0.01
3.0
10
20
10
5
50
100
2.5
2.0
1.5
1.0
0.5
0
3.0
3.5
RATING AND CHARACTERISTICS CURVES ( SE1L THRU SE6L )
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
REVERSE VOLTAGE, (V)
JUNCTION
CAPACITANCE,
(pF)
4
6
40
20
10
60
200
100
0.2
0.1
2
1
0.4
2
1.0
4
10
20
40
100
FIG.6 TYPICAL JUNCTION CAPACITANCE
8.3ms Single Half Sine-Wave
(JEDED Method)
Pulse Width=300uS
1% Duty Cycle
TJ = 25 OC
TJ = 25 OC
SE1L~SE4L
SE5L~SE6L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SE7001 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| SE7002 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| SE7006 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 500MA I(C) | TO-66 |
| SE701 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| SE7010 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-5 |
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