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参数资料
| 型号： | SEP8506-003 |
| 元件分类： | 红外LED |
| 英文描述： | 4.45 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 文件页数： | 1/4页 |
| 文件大小： | 421K |
| 代理商： | SEP8506-003 |
GaAs Infrared Emitting Diode
SEP8506
DESCRIPTION
FEATURES
Side-emitting plastic package
50 (nominal) beam angle
935 nm wavelength
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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| SFH303 | PHOTO TRANSISTOR DETECTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SEP8506-137 | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SEP8506-140 | 功能描述:红外发射源 Infrared Sensors RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| SEP85063 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTER 935NM 制造商:Honeywell Sensing and Control 功能描述:IR EMITTER, 935NM 制造商:Honeywell Sensing and Control 功能描述:IR EMITTER, 935NM; Peak Wavelength:935nm; Forward Current If(AV):50mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:50; Forward Voltage VF Max:1.5V; Operating Temperature Min:-40C; Operating Temperature Max:85C ;RoHS Compliant: Yes |
| SEP85063 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTER 935NM |
| SEP8507-001 | 功能描述:红外发射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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