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| 型号： | SESD0201C-006-058 |
| 厂商： | TE Connectivity |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | ESD PROTECTOR 0201 5.8V SILICON |
| 产品培训模块： | Circuit Protection Products |
| 视频文件： | Chip SESD Q&A at DesignCon 2011 |
| 产品目录绘图： | SESD0201 Series |
| 特色产品： | Silicon ESD Protection Devices |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.8V |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 0201（0603 公制） |
| 供应商设备封装： | 0201（0603 公制） |
| 包装： | 标准包装 |
| 产品目录页面： | 2404 (CN2011-ZH PDF) |
| 其它名称： | SESD0201C-006-058DKR |
PRODUCT: SESD0201C-006-058
ESD Protector
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
Overvoltage Protection Device
Circuit Protection Products
DOCUMENT: SCD 27716
REV LETTER: A
REV DATE: SEPTEMBER 11, 2009
PAGE NO.: Page 1 of 5
Specification Status: Released
BENEFITS
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Small-size bi-directional ESD protection diodes
Appropriate for ESD protection in space-constrained
portable electronics and mobile handsets
Bi-directional operation allows placement on PCB
without orientation constraint
Helps protect electronic circuits against damage from
Electrostatic Discharge (ESD) events
Assist equipment to pass IEC61000-4-2, level 4
testing
RoHS compliant and Halogen Free
FEATURES
? Ultra-low Input capacitance – 0.6pF (typ)
? Low leakage current – 1.0 μ A (max)
? Low breakdown voltage – 5.8V (min)
? ESD maximum rating per IEC61000-4-2 standard
o ± 8kV contact discharge
o ± 15kV air discharge
? Capable of withstanding numerous ESD strikes
? Small package size: 0.60mm x 0.30mm
? Low package height: 0.27mm
APPLICATIONS
PART NUMBERING
SESD 0201 C - 006 - 058
Series
EIA Size
Chip Scale Package
MATERIALS INFORMATION
Breakdown Voltage
5.8V (min)
Input Capacitance
0.6 pF (typ)
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Cellular phones and portable electronics
High speed data lines and low voltage antenna ports
USB 2.0/3.0, HDMI 1.3/1.4, and DisplayPort
RoHS Compliant
ELV Compliant
Halogen Free *
HF
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o Less than 0.8dB insertion loss up to 5.0GHz
Applications requiring ESD performance in an ultra-
small package
* Halogen Free refers to: Br ≤ 900ppm, Cl ≤ 900ppm, Br+Cl ≤ 1500ppm
Breakdown Voltage – V br @ I t = 1mA
Device Characteristics @ T = 25 o C
Input Capacitance @ V r = 0V, f = 1MHz
Working Reverse Voltage (peak) - V wrv
(1)
Min
--
--
5.8
Typ
0.6
--
--
Max
0.9
5.0
--
Unit
pF
V
V
SUPERSEDED
NOT the LATEST
C
V br is measured at test current I t
Leakage current @ V wrv = 5.0V -- -- 1.0 uA
Total Power Dissipation - Pd (on 30mm x 30mm FR-4) -- -- 250 mW
ESD contact discharge per IEC61000-4-2 standard -- -- ±8 kV
ESD air discharge per IEC61000-4-2 standard -- -- ±15 kV
0
Operating (T junction ) and Storage Temperature Range -40 to +125
(1)
REVISION
相关PDF资料 |
PDF描述 |
|---|---|
| SESD0201C-120-058 | ESD PROTECTOR 0201 5.8V SILICON |
| SESD0201P1BN-0400-090 | TVS DIODE 6V 1CH BI 0201 |
| SESD0402Q2UG-0020-090 | TVS DIODE 5V 2CH UNI SMD |
| SESD0402S-005-054 | ESD PROTECT SOD-923 5.4V SILICON |
| SESD0402X1BN-0010-098 | TVS DIODE 5V 1CH BI SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SESD0201C-120-058 | 功能描述:ESD 抑制器 0201 PKG 5.8V 12.pF SESD PROTECTOR RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SESD0201P1BN-0400-090 | 功能描述:ESD 抑制器 0201 PKG 9V 4.pF SESD PROTECTOR RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SESD0201X1BN-0010-098 | 功能描述:ESD 抑制器 1-CH 0201 9V Bi-Di .10pF 20kV SESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SESD0201X1UN-0020-090 | 功能描述:ESD 抑制器 1-CH 0201 9V Uni-Di .20pF 20kV SESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SESD03 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:110W Transient Voltage Suppressors Diode |
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