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参数资料
| 型号： | SF30CG |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | SF30CG |
DS24014 Rev. B-2
1 of 2
SF30AG - SF30JG
SF30AG - SF30JG
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
DO-201AD
Dim
Min
Max
A
25.40
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
A
B
C
D
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Diffused Junction
Super-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 125A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 1.12 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF30
AG
SF30
BG
SF30
CG
SF30
DG
SF30
FG
SF30
GG
SF30
HG
SF30
JG
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
300
400
500
600
V
RMS Reverse Voltage
VR(RMS)
35
70
100
140
210
280
350
420
V
Average Rectified Output Current
(Note 1)
@ TA = 55
°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
125
A
Forward Voltage
@ IF = 3.0A
VFM
0.95
1.3
1.5
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 100
°C
IRM
5.0
100
A
Reverse Recovery Time (Note 3)
trr
35
40
50
ns
Typical Junction Capacitance (Note 2)
Cj
75
50
pF
Typical Thermal Resistance Junction to Ambient
RθJA
32
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SF30CG-B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER |
| SF30CG-T | 功能描述:整流器 3.0A 150V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SF30DG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER |
| SF30DG-B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER |
| SF30DG-T | 功能描述:整流器 3.0A 200V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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