参数资料
型号: SFH600-0X007T
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: OPTOCOUPL DC-IN 1CH TRANS W/BASE DC-OUT 6PDIP SMD - Tape and Reel
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR > 40-80%
文件页数: 2/9页
文件大小: 121K
代理商: SFH600-0X007T
Document Number: 83662
Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
587
SFH600
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between emitter
and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
t = 1.0 s
V
ISO
5300
V
RMS
7
7
mm
mm
0.4
mm
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
10
12
10
11
Ω
Ω
°C
°C
°C
Storage temperature range
Ambient temperature range
Junction temperature
- 55 to + 150
- 55 to + 100
100
max. 10 s, dip soldering
max. 10 s, dip soldering:
distance to seating plane
1.5 mm
Soldering temperature
(2)
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
thja
1.25
1.65
V
V
μA
pF
K/W
6
0.01
25
750
10
f = 1 MHz, V
CE
= 5 V
f = 1 MHz, V
CB
= 5 V
f = 1 MHz, V
EB
= 5 V
C
CE
C
CB
C
EB
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
5.2
6.5
9.5
500
2
2
2
5
pF
pF
pF
K/W
nA
nA
nA
nA
Collector emitter leakage
current
V
CE
= 10 V
SFH600-0
SFH600-1
SFH600-2
SFH600-3
35
35
35
70
COUPLER
Saturation voltage collector
emitter voltage
Capacitance (input to output)
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
0.25
0.4
V
C
IO
0.6
pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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