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参数资料
| 型号： | SFH601-1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 40-80% |
| 文件页数： | 2/10页 |
| 文件大小： | 132K |
| 代理商： | SFH601-1 |
www.vishay.com
594
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
Rev. 1.4, 10-Dec-08
SFH601
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage
Emitter base voltage
V
CE
V
EBO
I
C
I
C
P
diss
100
7
50
100
150
V
V
Collector current
mA
mA
mW
t = 1.0 ms
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
V
ISO
5300
V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
≥
10
12
≥
10
11
Ω
Ω
°C
°C
°C
Storage temperature range
Ambient temperature range
Junction temperature
- 55 to + 150
- 55 to +100
100
Soldering temperature
(2)
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
thja
1.25
1.65
V
V
μA
pF
K/W
6
0.01
25
750
10
f = 1 mHz, V
CE
= 5 V
f = 1 mHz, V
CB
= 5 V
f = 1 mHz, V
EB
= 5 V
C
CE
C
CB
C
EB
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
6.8
8.5
11
500
2
2
5
5
pF
pF
pF
K/W
nA
nA
nA
nA
Collector emitter leakage current
V
CE
=10 V
SFH601-1
SFH601-2
SFH601-3
SFH601-4
50
50
100
100
COUPLER
Saturation voltage collector emitter
Capacitance (input to output)
I
F
= 10 mA, I
C
= 2.5 mA
V
I-O
= 0, f = 1 MHz
V
CEsat
C
IO
0.25
0.6
0.4
V
pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SFH601-1X001 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| SFH601-1X006 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| SFH601-1X007 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| SFH601-1X009 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, with Base Connection |
| SFH601-1X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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