![](http://datasheet.mmic.net.cn/10000/SFH608-2-X001_datasheet_1451668/SFH608-2-X001_1.png)
Document Number: 83664
www.vishay.com
Revision 17-August-01
2–225
FEATURES
Very High CTR at IF=1.0 mA, VCE=0.5 V
– SFH608-2, 63-125%
– SFH608-3, 100-200%
– SFH608-4, 160-320%
– SFH608-5, 250-500%
Specied Minimum CTR at IF=0.5 mA,
VCE=1.5 V: ≥ 32% (typ. 120%)
Good CTR Linearity with Forward Current
Low CTR Degradation
High Collector-Emitter Voltage VCEO=55 V
Isolation Test Voltage: 5300 VRMS
Low Current Input
Low Coupling Capacitance
High Common Mode Transient Immunity
Phototransistor Optocoupler in 6 Pin DIP
Package
Field Effect Stable by TRIOS (TRansparent IOn
Shield)
VDE 0884 Available with Option 1
Underwriters Lab File #E52744
APPLICATIONS
Telecommunications
Industrial Controls
Ofce Machines
Microprocessor System Interfaces
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
V
DE
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage ................................................................................... 6.0 V
DC Forward Current ........................................................................... 50 mA
Surge Forward Current (tp
≤10 s) .......................................................2.5 A
Total Power Dissipation .................................................................... 70 mW
Detector
Collector-Emitter Voltage ...................................................................... 55 V
Collector-Base Voltage.......................................................................... 55 V
Emitter-Base Voltage ........................................................................... 7.0 V
Collector Current ............................................................................... 50 mA
Surge Collector Current (tp
≤1.0 ms) ................................................100 mA
Total Power Dissipation .................................................................. 150 mW
Isolation Test Voltage (between emitter and detector, refer
to climate DIN 40046 part 2 Nov. 74) (t=1.0 s)........................ 5300 VRMS
Creepage ......................................................................................
≥7.0 mm
Clearance......................................................................................
≥7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ...................................................... 175
Isolation Resistance
VIO=500 V, TA=25°C .................................................................... ≥10
12
VIO=500 V, TA=100°C ................................................................. ≥10
11
Storage Temperature Range ............................................. –55
°C to +150°C
Operating Temperature Range ......................................... –55
°C to +100°C
Junction Temperature......................................................................... 100
°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm)................................................ 260°C
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
SFH608
5.3 KV, TRIOS, Low Current
Phototransistor Optocoupler