参数资料
型号: SFH615A-3X018
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 4 PIN
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
文件页数: 2/9页
文件大小: 128K
代理商: SFH615A-3X018
www.vishay.com
632
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83671
Rev. 2.2, 05-Oct-09
SFH615A, SFH6156
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Reliability, 5300 V
RMS
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
OUTPUT
Collector emitter voltage
Emitter collector voltage
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
6
V
60
2.5
mA
A
t
p
10 μs
V
CE
V
ECO
I
C
I
C
70
7
50
100
V
V
Collector current
mA
mA
t
p
1 ms
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between emitter and detector
Comparative tracking index per
DIN IEC112/VDE 0303 part 1
t = 1 s
V
ISO
5300
V
RMS
7
7
0.4
mm
mm
mm
CTI
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
10
12
10
11
Ω
Ω
°C
°C
Storage temperature range
Ambient temperature range
- 55 to + 150
- 55 to +100
Soldering temperature
(2)
max. 10 s, dip soldering distance to
seating plane
1.5 mm
T
sld
260
°C
0
50
100
150
200
0
25
50
75
100
125
150
1
8
4
8
3
P
t
w
e
W
)
Phototransistor
Diode
T
am
b
- Am
b
ient Temperat
u
re (°C)
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