参数资料
型号: SFH618A-4-X016
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4
文件页数: 2/8页
文件大小: 133K
代理商: SFH618A-4-X016
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83673
652
Rev. 1.9, 10-Dec-08
SFH618A, SFH6186
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Low Input Current
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Power dissipation
Pdiss
mW
Forward current
IF
60
mA
OUTPUT
Collector emitter voltage
VCE
55
V
Emitter collector voltage
VEC
7V
Collector current
IC
50
mA
tp ≤ 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max. 10 s, dip soldering distance
to seating plane
≥ 1.5 mm
Tsld
260
°C
0
50
100
150
200
020
40
60
80
100
120
19386
P
-
Po
w
er
Dissipation
(m
W
)
tot
Detector
LED
Tamb - Ambient Temperature (°C)
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 5 mA
VF
1.1
1.5
V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rthja
1070
K/W
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