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参数资料
| 型号： | SFH636-X007 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps |
| 封装： | ROHS COMPLIANT, SMD, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 123K |
| 代理商： | SFH636-X007 |
Document Number: 83681
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.7, 10-Dec-08
703
SFH636
Optocoupler, High Speed Phototransistor
Output, 1 Mbd, 10 kV/ms CMR, Split
Collector Transistor Output
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Supply voltage
VS
- 0.5 to 30
V
Output voltage
VO
- 0.5 to 20
V
Output current
IO
8mA
Power dissipation
Pdiss
100
mW
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 16 mA
VF
1.5
1.8
V
Reverse current
VR = 3 V
IR
0.5
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
125
pF
Thermal resistance
Rthja
700
K/W
OUTPUT
Logic high supply current
IF = 0 V, VO (open), VCC = 15 V
ICCH
0.01
1
A
IF = 0 V, VO (open), VCC = 15 V
ICCH
0.01
2
A
Output current, output high
IF = 0 V, VO (open), VCC = 5.5 V
IOH
0.003
0.5
A
IF = 0 V, VO (open), VCC =15 V
IOH
0.01
1
A
IOH
50
A
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
3pF
Thermal resistance
Rthja
300
K/W
COUPLER
Coupling capacitance
CC
0.6
pF
Collector emitter saturation voltage
IF = 16 mA, IO = 2.4 mA,
VCC = 4.5 V
VOL
0.1
0.4
V
Supply current, logic low
IF = 16 mA, VO open, VCC = 15 V
IDD
80
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相关代理商/技术参数 |
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| SFH636-X017 | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>19% RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| SFH636-X017T | 功能描述:高速光耦合器 1Mbd High-Speed Trans Out CTR>19% RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
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