参数资料
型号: SFH640-1-X001
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: DIP-6
文件页数: 1/3页
文件大小: 456K
代理商: SFH640-1-X001
Document Number: 83682
www.vishay.com
Revision 17-August-01
2–259
FEATURES
CTR at IF=10 mA, VCE=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
Good CTR Linearity with Forward Current
Low CTR Degradation
Very High Collector-emitter Breakdown
Voltage, BVCER=300 V
Isolation Test Voltage: 5300 VRMS
Low Coupling Capacitance
High Common Mode Transient Immunity
Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
Field Effect Stable by TRIOS
(TRansparent IOn Shield)
VDE 0884 Available with Option 1
Underwriters Lab File #E52744
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guaran-
teed due to unforeseeable yield spread.
V
DE
SFH640
5.3 kV TRIOS High BVCER Voltage
Phototransistor Optocoupler
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage................................................................................. 6.0 V
DC Forward Current......................................................................... 60 mA
Surge Forward Current (tP≤10 s) .................................................... 2.5 A
Total Power Dissipation................................................................ 100 mW
Detector
Collector-emitter Voltage ................................................................. 300 V
Collector-base Voltage...................................................................... 300 V
Emitter-base Voltage ......................................................................... 7.0 V
Collector Current............................................................................. 50 mA
Surge Collector Current (tP≤1.0 ms) .............................................. 100 mA
Total Power Dissipation................................................................ 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) .................................................................5300 VRMS/7500 VPK
Isolation Resistance
VIO=500 V, TA=25°C .................................................................. ≥10
12
VIO=500 V, TA=100°C ................................................................ ≥10
11
Insulation Thickness between Emitter and Detector ...................
≥0.4 mm
Creepage.....................................................................................
≥7.0 mm
Clearance ....................................................................................
≥7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ....................................................175
Storage Temperature Range........................................... –55
°C to +150°C
Operating Temperature Range ....................................... –55
°C to +100°C
Junction Temperature .......................................................................100
°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm)...............................................260°C
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
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SFH640-2 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
SFH640-2 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER H/V TRANSISTOR O/P
SFH640-2X007 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
SFH640-3 功能描述:晶体管输出光电耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
SFH640-3X007 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk